ST Package Increases MOSFET Power Density

By introducing a high-performance power package, ST has increased the power density achievable with its MDmesh V power MOSFET and enabled designers to achieve slimmer power supply enclosures. The 1mm-high surface-mount package houses the industry-standard TO-220 die size within a leadless outline measuring 8x8mm and features an exposed metal drain pad for efficient removal of internally generated heat. This standard is available from ST Microelectronics and Infineon Technologies - named Powerflat 8x8 HV by ST and Thinpak 8x8 by Infineon.

The package's compact form factor and high thermal performance, combined with the low RDS(ON) per die area of ST's MDmesh V technology, maximise power density and reliability to save PCB space. ST will add MOSFETs in the Powerflat 8x8 HV to its existing MDmesh V portfolio, announcing that the first of these will be the 650V STL21N65M5. Features of STL21N65M5 include: RDS(ON): 0.190Ohms; maximum rated current (ID): 17A; junction-to-case thermal resistance (Rthj-c): 1deg.

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